MPSH10 NTE Electronics, Inc Bipolar RF Transistors

Manufacturer: NTE Electronics, Inc
Series: -
Packaging: Bag
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole