NESG340033-T1B-A Renesas Electronics Corporation Bipolar RF Transistors

Mfr: Renesas Electronics Corporation
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 1GHz
Gain: 12dB
Power - Max: 480mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 15mA, 3.3V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 150°C (TJ)
Grade: -
Qualification: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MINIMOLD