NTE236 NTE Electronics, Inc Bipolar RF Transistors

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 1.7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 12V
Current - Collector (Ic) (Max): 6A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220