NTE160 NTE Electronics, Inc Bipolar RF Transistors

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 5dB @ 800MHz
Gain: 14dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 90°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72