MT3S113(TE85L,F) Toshiba Semiconductor and Storage Bipolar RF Transistors

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 11.8dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Base Product Number: MT3S113