G3S12005D Global Power Technology-GPT Single Diodes

Mfr: Global Power Technology-GPT
Series: -
Package: Cut Tape (CT) Tape & Box (TB)
Product Status: Active
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 34A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: 475pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C